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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3309 DESCRIPTION *With TO-220Fa package *High collector breakdown voltage *Excellent switching times APPLICATIONS *Switching regulators and high voltage switching applications *High speed DC-DC converter application PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 2 4 0.5 2.0 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector -base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IE=1mA; IE=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=400V; IE=0 VEB=7V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V 20 8 MIN 400 500 2SC3309 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 1 V V A mA Switching times tr ts tf Rise time Storage time Fall time IB1=-IB2=0.08A VCC<200V;RL=250> PW=20s 1.0 2.5 1.0 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3309 Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3309 4 |
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